Method for etching single wafer
US8466071B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2007 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Apr 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6708
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.