Semiconductor device with enhanced mobility and method
US8466513B2 · kind B2 · utility
15Cited by
12References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2011 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Oct 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the control electrode to induce stress within predetermined regions of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.