Patent · US Active

Methods of forming material over substrates

US8481122B2 · kind B2 · utility

4Cited by
11References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 12, 2006
Grant dateJul 9, 2013
Priority date
Expiry dateMay 7, 2030

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C16/40
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

ALD-type methods which include providing two or more different precursors within a chamber at different and substantially non-overlapping times relative to one another to form a material, and thereafter exposing the material to one or more reactants to change a composition of the material. In particular aspects, the precursors utilized to form the material are metal-containing precursors, and the reactant utilized to change the composition of the material comprises oxygen, silicon, and/or nitrogen.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.