Plasma processing method
US8486291B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2011 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Jul 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32834
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.