HVPE precursor source hardware

US8491720B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Tetsuya Ishikawa · Fuji, JP
• David H. Quach · San Jose, US
• Anzhong Chang · San Jose, US
• Olga Kryliouk · Gainesville, US
• Yuriy Melnik · San Jose, US
• Harsukhdeep Singh Ratia · Saratoga, US
• Son T. Nguyen · San Jose, US
• Lily Pang · Fremont, US

Key dates

• Filing date: Dec 14, 2009
• Grant date: Jul 23, 2013
• Expiry date: May 22, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T137/8376
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.