Etch tool process indicator method and apparatus
US8492174B2 · kind B2 · utility
1Cited by
28References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 2012 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | May 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for providing a process indicator for an etching chamber is provided. A wafer with a blanket etch layer is provided into the etching chamber. A blanket etch is performed on the blanket etch layer. A blanket deposition layer is deposited over the blanket etch layer after performing the blanket etch has been completed. A thickness of the blanket etch layer and a thickness of the blanket deposition layer is measured. The measured thicknesses are used to determine a process indicator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.