Metal control gate structures and air gap isolation in non-volatile memory
US8492224B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2011 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Aug 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High-density semiconductor memory utilizing metal control gate structures and air gap electrical isolation between discrete devices in these types of structures are provided. During gate formation and definition, etching the metal control gate layer(s) is separated from etching the charge storage layer to form protective sidewall spacers along the vertical sidewalls of the metal control gate layer(s). The sidewall spacers encapsulate the metal control gate layer(s) while etching the charge storage material to avoid contamination of the charge storage and tunnel dielectric materials. Electrical isolation is provided, at least in part, by air gaps that are formed in the row direction and/or air gaps that are formed in the column direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.