Methods for relaxation and transfer of strained layers and structures fabricated thereby
US8492244B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2011 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Nov 24, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.