Photoresist-free metal deposition
US8500985B2 · kind B2 · utility
3Cited by
193References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2007 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Aug 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0713
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.