Method and system for non-destructive determination of dielectric breakdown voltage in a semiconductor wafer
US8501504B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2008 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Aug 3, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/318511
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
According to one exemplary embodiment, a non-destructive method for determining a breakdown voltage of a dielectric layer on a semiconductor substrate includes injecting a test current in increasing ramp steps into the dielectric layer. The method further includes measuring a test voltage across the dielectric layer at each increasing ramp step of the test current. The method further includes detecting a dropped test voltage in response to the increasing ramp steps of the test current. The ramp steps of the test current can be substantially logarithmically increased. The breakdown voltage of the dielectric layer can be designated to be substantially equal to the dropped test voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.