Patent · US Active

Drive current increase in field effect transistors by asymmetric concentration profile of alloy species of a channel semiconductor alloy

US8501601B2 · kind B2 · utility

6Cited by

2References

15Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Stefan Flachowsky · Dresden, DE
Thilo Scheiper · Dresden, DE
Steven Langdon · Dresden, DE
Jan Hoentschel · Dresden, DE

Key dates

Filing date	Sep 22, 2011
Grant date	Aug 6, 2013
Priority date	—
Expiry date	Sep 22, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/021
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

When forming sophisticated transistors, the channel region may be provided such that the gradient of the band gap energy of the channel material may result in superior charge carrier velocity. For example, a gradient in concentration of germanium, carbon and the like may be implemented along the channel length direction, thereby obtaining higher transistor performance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.