Method of forming a semiconductor device having a metal silicide and alloy layers as electrode
US8501623B2 · kind B2 · utility
5Cited by
2References
29Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 22, 2010 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Mar 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A semiconductor device includes an electrode having a metal silicide layer and a metal alloy layer, and a data storage element formed on the electrode. The metal silicide layer has a concave surface to correspond to a convex surface of the metal alloy layer such that the concave surface of the metal silicide layer and the convex surface of the metal alloy layer form a curved boundary.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.