Split-gate structure in trench-based silicon carbide power device
US8507978B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2011 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Sep 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
An integrated structure includes a plurality of split-gate trench MOSFETs. A plurality of trenches is formed within the silicon carbide substrate composition, each trench is lined with a passivation layer, each trench being substantially filled with a first conductive region a second conductive region and an insulating material having a dielectric constant similar to a dielectric constant of the silicon carbide substrate composition. The first conductive region is separated from the passivation layer by the insulating material. The first and second conductive regions form gate regions for each trench MOSFET. The first conductive region is separated from the second conductive region by the passivation layer. A doped body region of a first conductivity type formed at an upper portion of the substrate composition and a doped source region of a second conductivity type formed inside the doped body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.