Methods of forming a pattern in a material and methods of forming openings in a material to be patterned
US8512938B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2010 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | May 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods of forming a pattern in a material and methods of forming openings in a material to be patterned are disclosed, such as a method that includes exposing first portions of a first material to radiation through at least two apertures of a mask arranged over the first material, shifting the mask so that the at least two apertures overlap a portion of the first portions of the first material, and exposing second portions of the first material to radiation through the at least two apertures. The first portions and the second portions will overlap in such a way that non-exposed portions of the first material are arranged between the first portions and second portions. The non-exposed or exposed portions of the first material may then be removed. The remaining first material may be used as a photoresist mask to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.