Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure
US8518782B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2010 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Jan 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/603
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate including a first source drain region, a second source drain region, and an intrinsic region therebetween; an asymmetric lightly doped drain (LDD) region within the substrate, wherein the asymmetric LDD region extends from the first source drain region into the intrinsic region between the first source drain region and the second source drain region; and a gate positioned atop the semiconductor substrate, wherein an outer edge of the gate overlaps the second source drain region. A related method and design structure are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.