Patent · US Active

Microelectronic device, in particular back side illuminated image sensor, and production process

US8524522B2 · kind B2 · utility

0Cited by

3References

14Claims

0Family size

Assignees

Inventors

Michel Marty · Buc, FR
Didier Dutartre · Meylan, FR
Francois Roy · Seyssinet-Pariset, FR
Pascal Besson · Gap, FR
Jens Prima · Gehrde, DE

Key dates

Filing date	Dec 9, 2010
Grant date	Sep 3, 2013
Priority date	—
Expiry date	Dec 30, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10F77/1226
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for producing a microelectronic device includes producing a first semiconductor substrate which includes a first layer and a second layer present between a first side and a second side of the substrate. First electronic components and an interconnecting part are produced on and above the second side. The substrate is then thinned by a first selective etch applied from the first side and stopping on the first layer followed by a second selective etch stopping on the second layer. A second substrate is attached over the interconnecting part. The electronic components may comprise optoelectronic devices which are illuminated through the second layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.