Silicon carbide semiconductor device
US8525223B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 19, 2012 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Apr 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.