Patent · US Active

Method for direct deposition of a germanium layer

US8530339B2 · kind B2 · utility

0Cited by

3References

16Claims

0Family size

Assignee

IMEC · BE

Inventors

Benjamin Vincent · San Francisco, US
Matty Caymax · Leuven, BE
Roger Loo · Leuven, BE
Johan Dekoster · Herent, BE

Key dates

Filing date	Jan 11, 2012
Grant date	Sep 10, 2013
Priority date	—
Expiry date	Jan 11, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0262
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure is related to a method for the deposition of a continuous layer of germanium on a substrate by chemical vapor deposition. According to the disclosure, a mixture of a non-reactive carrier gas and a higher order germanium precursor gas, i.e. of higher order than germane (GeH4), is applied. In an example embodiment, the deposition is done under application of a deposition temperature between 275° C. and 500° C., with the partial pressure of the precursor gas within the mixture being at least 20 mTorr for temperatures between 275° C. and 285° C., and at least 10 mTorr for temperatures between 285° and 500° C.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.