Silicon-on-insulator substrate and method of forming

US8536035B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Alan B. Botula · South Burlington, US
• Mark D. Jaffe · Shelburne, US
• Alvin J. Joseph · Williston, US
• Kenneth F. McAvey, Jr. · Winooski, US
• Gerd Pfeiffer · Poughquag, US
• Richard A. Phelps · Colchester, US

Key dates

• Filing date: Feb 1, 2012
• Grant date: Sep 17, 2013
• Expiry date: Feb 1, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76254
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Silicon-on-insulator (SOI) structures and related methods of forming such structures. In one case, a method includes providing a silicon-on-insulator (SOI) handle substrate having: a substantially uniform resistivity profile along a depth of the handle substrate; and an interstitial oxygen (Oi) concentration of less than approximately 10 parts per million atoms (ppma). The method further includes counter-doping a surface region of the handle, causing the surface region to have a resistivity greater than approximately 3 kOhm-cm, and joining the surface region of the handle substrate with a donor wafer.