Wafer with eutectic bonding carrier and method of manufacturing the same
US8536709B1 · kind B1 · utility
3Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2012 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Jun 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer with a eutectic bonding carrier and a method of manufacturing the same are disclosed, wherein the wafer comprises a thinned wafer, a eutectic bonding layer formed on the backside of said thinned wafer, a eutectic bonding carrier attached on said eutectic bonding layer, and a plurality of openings formed at the active side of said thinned wafer and exposing said eutectic bonding layer on the backside of said thinned wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.