Patent · US Active

Technique for enhancing transistor performance by transistor specific contact design

US8541885B2 · kind B2 · utility

3Cited by

4References

8Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Martin Gerhardt · Dresden, DE
Ralf Richter · Dresden, DE
Thomas Feudel · Radebeul, DE
Uwe Griebenow · Markkleeberg, DE

Key dates

Filing date	May 13, 2011
Grant date	Sep 24, 2013
Priority date	—
Expiry date	Sep 24, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0212
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By locally adapting the size and/or density of a contact structure, for instance, within individual transistors or in a more global manner, the overall performance of advanced semiconductor devices may be increased. Hence, the mutual interaction between the contact structure and local device characteristics may be taken into consideration. On the other hand, a high degree of compatibility with conventional process strategies may be maintained.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.