Patent · US Active

Bonding connection between a bonding wire and a power semiconductor chip

US8541892B2 · kind B2 · utility

0Cited by

8References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Dirk Siepe · Dortmund, DE
Thomas Gutt · Taufkirchen, DE
Roman Roth · Sattendorf, AT

Key dates

Filing date	Sep 23, 2010
Grant date	Sep 24, 2013
Priority date	—
Expiry date	Jul 28, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/2076
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A bonding connection between a bonding wire and a power semiconductor chip is disclosed. The power semiconductor chip has a semiconductor body arranged in which is an active cell region with a multiplicity of cells arranged one following the other in a lateral direction and connected electrically in parallel. The semiconductor body has a surface portion arranged above the active cell region in a vertical direction perpendicular to the lateral direction. Applied to the surface portion is a metallization layer onto which a bonding wire is bonded. The bonding wire comprises an alloy containing at least 99% by weight aluminum and at least one further alloying constituent. The aluminum has a grain structure with a mean grain size which is less than 2 μm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.