Earth abundant photonic structures
US8542437B1 · kind B1 · utility
1Cited by
27References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2011 |
| Grant date | Sep 24, 2013 |
| Priority date | — |
| Expiry date | Feb 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/17
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to semiconductor devices comprising rare earth based optical gain medium layers suitable for electronic and optoelectronic applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.