Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 · kind B2 · utility
20Cited by
20References
13Claims
0Family size
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Key dates
| Filing date | May 9, 2006 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Feb 9, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm−2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.