Method of patterning of magnetic tunnel junctions

US8546263B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Olivier Joubert · Meylan, FR
• Benjamin Schwarz · Strohberg, DE
• Jérémy Gilbert Maurice Pereira · Grenoble, FR
• Kevin Menguelti · Grenoble, FR
• Erwine Maude Pargon · Le Pont-de-Claix, FR
• Maxime Darnon · White Plains, US

Key dates

• Filing date: Apr 27, 2011
• Grant date: Oct 1, 2013
• Expiry date: Apr 27, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/01

Abstract

Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH3, H2, CH4, C2H4, SiH4, and H2S. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.