Ammonia-based plasma treatment for metal fill in narrow features
US8551880B2 · kind B2 · utility
5Cited by
5References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2008 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Oct 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device is described. A substrate is provided having a patterned dielectric layer disposed thereon. A trench is formed in the dielectric layer. The surfaces of the trench are treated with an ammonia-based plasma process. A metal layer is then formed in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.