Nonvolatile memory device using a tunnel nitride as a current limiter element
US8552413B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 7, 2012 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Feb 7, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.