SOI lateral bipolar junction transistor having a wide band gap emitter contact
US8557670B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2012 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Sep 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/821
Abstract
A lateral heterojunction bipolar transistor is formed on a semiconductor-on-insulator substrate including a top semiconductor portion of a first semiconductor material having a first band gap and a doping of a first conductivity type. A stack of an extrinsic base and a base cap is formed such that the stack straddles over the top semiconductor portion. A dielectric spacer is formed around the stack. Ion implantation of dopants of a second conductivity type is performed to dope regions of the top semiconductor portion that are not masked by the stack and the dielectric spacer, thereby forming an emitter region and a collector region. A second semiconductor material having a second band gap greater than the first band gap and having a doping of the second conductivity type is selectively deposited on the emitter region and the collector region to form an emitter contact region and a collector contact region, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.