Germanium lateral bipolar junction transistor
US8558282B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2012 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Sep 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
Abstract
A germanium lateral bipolar junction transistor (BJT) is formed employing a germanium-on-insulator (GOI) substrate. A silicon passivation layer is deposited on the top surface of a germanium layer in the GOI substrate. Shallow trench isolation structures, an extrinsic base region structure, and a base spacer are subsequently formed. A germanium emitter region, a germanium base region, and a germanium collector region are formed within the germanium layer by ion implantation. A silicon emitter region, a silicon base region, and a silicon collector region are formed in the silicon passivation layer. After optional formation of an emitter contact region and a collector contact region, metal semiconductor alloy regions can be formed. A wide gap contact for minority carriers is provided between the silicon base region and the germanium base region and between the silicon emitter region and the germanium emitter region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.