Dry cleaning method of substrate processing apparatus
US8562751B2 · kind B2 · utility
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2References
19Claims
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Key dates
| Filing date | Jan 17, 2012 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Jan 17, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F1/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A dry cleaning method of a substrate processing apparatus includes forming a metal oxide by oxidizing a metal film adhered to the inside of a processing chamber of the substrate processing apparatus; forming a complex by reacting the metal oxide with β-diketone; and sublimating the complex to be removed. A cleaning gas containing oxygen and β-diketone is supplied into the processing chamber while heating the inside of the processing chamber. A flow rate ratio of oxygen to β-diketone in the cleaning gas is set such that a formation rate of the metal oxide is lower than a formation rate of the complex.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.