Methods of forming contact structures including alternating metal and silicon layers and related devices
US8563372B2 · kind B2 · utility
18Cited by
15References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2010 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Mar 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device, the method comprising providing a semiconductor layer, and providing a first layer of a first metal on the semiconductor layer. A second layer may be provided on the first layer of the first metal. The second layer may include a layer of silicon and a layer of a second metal, and the first and second metals may be different. The first metal may be titanium and the second metal may be nickel. Related devices, structures, and other methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.