Methods for depositing metal in high aspect ratio features
US8563428B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2011 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Sep 1, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3492
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.