Patent · US Active

Heat dissipation in temperature critical device areas of semiconductor devices by heat pipes connecting to the substrate backside

US8564120B2 · kind B2 · utility

1Cited by

7References

20Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Anthony Mowry · Kyle, US
David Gerald Farber · Plano, US
Fred N. Hause · Austin, US
Markus Lenski · Dresden, DE

Key dates

Filing date	Dec 21, 2009
Grant date	Oct 22, 2013
Priority date	—
Expiry date	Apr 24, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3025
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By providing heat dissipation elements or heat pipes in temperature critical areas of a semiconductor device, enhanced performance, reliability and packing density may be achieved. The heat dissipation elements may be formed on the basis of standard manufacturing techniques and may be positioned in close proximity to individual transistor elements and/or may be used for shielding particular circuit portions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.