FinFET with improved gate planarity

US8569125B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Theodorus E. Standaert · Clifton Park, US
• Kangguo Cheng · Schenectady, US
• Balasubramanian S. Haran · Watervliet, US
• Shom Ponoth · Irvine, US
• Soon-Cheon Seo · White Plains, US
• Tenko Yamashita · Schenectady, US

Key dates

• Filing date: Nov 30, 2011
• Grant date: Oct 29, 2013
• Expiry date: Jan 27, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

A FinFET with improved gate planarity and method of fabrication is disclosed. The gate is disposed on a pattern of fins prior to removing any unwanted fins. Lithographic techniques or etching techniques or a combination of both may be used to remove the unwanted fins. All or some of the remaining fins may be merged.