Inventor · Watervliet, NY, US

Balasubramanian S. Haran

84Patents
13h-index
39Co-inventors
76Inventor score

Filing activity: Oct 1, 2009 → May 16, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US8569152B1 Cut-very-last dual-epi flow Electricity 59 Active
US8420459B1 Bulk fin-field effect transistors with well defined isolation Electricity 57 Active
US8358012B2 Metal semiconductor alloy structure for low contact resistance Electricity 37 Active
US8232607B2 Borderless contact for replacement gate employing selective deposition Electricity 33 Active
US8581320B1 MOS capacitors with a finfet process Electricity 24 Active
US8455932B2 Local interconnect structure self-aligned to gate structure Electricity 24 Active
US8999774B2 Bulk fin-field effect transistors with well defined isolation Electricity 19 Active
US8987790B2 Fin isolation in multi-gate field effect transistors Electricity 19 Active
US8309447B2 Method for integrating multiple threshold voltage devices for CMOS Electricity 19 Active
US8932918B2 FinFET with self-aligned punchthrough stopper Electricity 18 Active
US8604539B2 Bulk fin-field effect transistors with well defined isolation Electricity 17 Active
US8592290B1 Cut-very-last dual-EPI flow Electricity 15 Active
US8623712B2 Bulk fin-field effect transistors with well defined isolation Electricity 15 Active
US8377795B2 Cut first methodology for double exposure double etch integration Electricity 11 Active
US8383490B2 Borderless contact for ultra-thin body devices Electricity 11 Active
US8394710B2 Semiconductor devices fabricated by doped material layer as dopant source Electricity 11 Active
US8617961B1 Post-gate isolation area formation for fin field effect transistor device Electricity 11 Active
US9087741B2 CMOS with dual raised source and drain for NMOS and PMOS Electricity 11 Active
US8569125B2 FinFET with improved gate planarity Electricity 11 Active
US8946792B2 Dummy fin formation by gas cluster ion beam Electricity 10 Active
US9406679B2 Integration of multiple threshold voltage devices for complementary metal oxide semiconductor using full metal gate Electricity 10 Active
US9269629B2 Dummy fin formation by gas cluster ion beam Electricity 10 Active
US8928067B2 Bulk fin-field effect transistors with well defined isolation Electricity 10 Active
US9082873B2 Method and structure for finFET with finely controlled device width Electricity 9 Active
US8796128B2 Dual metal fill and dual threshold voltage for replacement gate metal devices Electricity 9 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.