Plasma processing apparatus and plasma processing method
US8569177B2 · kind B2 · utility
2Cited by
0References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 9, 2012 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Aug 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.