Magnetoresistive random access memory
US8570792B2 · kind B2 · utility
2Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2012 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Jan 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed above or below the MTJ. The induction line is configured to induce a magnetic field at the MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.