Patent · US Active

Method of increasing the germanium concentration in a silicon-germanium layer and semiconductor device comprising same

US8574981B2 · kind B2 · utility

12Cited by

1References

18Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Stefan Flachowsky · Dresden, DE
Thilo Scheiper · Dresden, DE
Peter Javorka · Radebeul, DE
Jan Hoentschel · Dresden, DE

Key dates

Filing date	May 5, 2011
Grant date	Nov 5, 2013
Priority date	—
Expiry date	May 18, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/832
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed herein is a method of forming a semiconductor device. In one example, the method comprises forming layer of silicon germanium on a P-active region of a semiconducting substrate wherein the layer of silicon germanium has a first concentration of germanium, and performing an oxidation process on the layer of silicon germanium to increase a concentration of germanium in at least a portion of the layer of silicon germanium to a second concentration that is greater than the first concentration of germanium.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.