Method of manufacturing semiconductor device having metal gate
US8574990B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2011 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Oct 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
The present invention provides a method of manufacturing semiconductor device having metal gate. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench and then a first metal layer and a first material layer are formed in the first trench. Next, the first metal layer and the first material layer are flattened. The second sacrifice gate is removed to form a second trench and then a second metal layer and a second material layer are formed in the second trench. Lastly, the second metal layer and the second material layer are flattened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.