Method for fabricating a semiconductor substrate
US8575010B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2009 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Aug 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
The invention relates to a method for fabricating a semiconductor substrate by providing a silicon on insulator type substrate that includes a base, an insulating layer and a first semiconductor layer, doping the first semiconductor layer to thereby obtain a modified first semiconductor layer, and providing a second semiconductor layer with a different dopant concentration than the modified first semiconductor layer over or on the modified first semiconductor layer. With this method, an improved dopant concentration profile can be achieved through the various layers which makes the substrates in particular more suitable for various optoelectronic applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.