Direct growth of diamond in backside vias for GaN HEMT devices
US8575657B2 · kind B2 · utility
13Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2012 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Mar 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaN high electron mobility transistor (HEMT) device having a silicon carbide substrate including a top surface and a bottom surface, where the substrate further includes a via formed through the bottom surface and into the substrate. The device includes a plurality of epitaxial layers provided on the top surface of the substrate, a plurality of device layers provided on the epitaxial layers, and a diamond layer provided within the via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.