Silicon carbide semiconductor device and manufacturing method of the same

US8575689B2 · kind B2 · utility

Assignees

• DENSO CORPORATION · JP
• TOYOTA JIDOSHA KABUSHIKI KAISHA · JP

Inventors

• Tomohiro Mimura · Nisshin, JP
• Shinichiro Miyahara · Nisshin, JP
• Hidefumi Takaya · Toyota, JP
• Masahiro Sugimoto · Toyota, JP
• Narumasa Soejima · Nisshin, JP
• Tsuyoshi Ishikawa · Tokyo, JP
• Yukihiko Watanabe · Nagakute, JP

Key dates

• Filing date: Dec 20, 2011
• Grant date: Nov 5, 2013
• Expiry date: Jan 23, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

An SiC semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate oxide film, a gate electrode, a source electrode and a drain electrode. The substrate has a Si-face as a main surface. The source region has the Si-face. The trench is provided from a surface of the source region to a portion deeper than the base region and extends longitudinally in one direction and has a Si-face bottom. The trench has an inverse tapered shape, which has a smaller width at an entrance portion than at a bottom, at least at a portion that is in contact with the base region.