Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode
US8575695B2 · kind B2 · utility
31Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2009 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Dec 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
Abstract
This invention discloses configurations and methods to manufacture lateral power device including a super-junction structure with an avalanche clamp diode formed between the drain and the gate. The lateral super-junction structure reduces on-resistance, while the structural enhancements, including an avalanche clamping diode and an N buffer region, increase the breakdown voltage between substrate and drain and improve unclamped inductive switching (UIS) performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.