Semiconductor substrate having multilayer film and method to reuse the substrate by delaminating a porous layer
US8575722B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2009 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Dec 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor wafer having a multilayer film, in production of a semiconductor device by the steps of forming a porous layer on a surface of a semiconductor wafer by changing a surface portion into the porous layer, forming a semiconductor film on a surface of the porous layer to produce a semiconductor wafer having a multilayer film, fabricating a device on the semiconductor film, and producing the semiconductor device by delaminating the semiconductor film along the porous layer, the semiconductor film having the device formed thereon, including flattening the semiconductor wafer after delaminating and reusing the flattened semiconductor wafer, the method further including a thickness adjusting step of adjusting a whole thickness of the semiconductor wafer having a multilayer film to be produced by reusing the semiconductor wafer so as to satisfy a predetermined standard.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.