Patent · US Active

Methods of forming conductive contacts

US8580666B2 · kind B2 · utility

4Cited by
20References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 27, 2011
Grant dateNov 12, 2013
Priority date—
Expiry dateSep 27, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Methods for forming memory devices and integrated circuitry, for example, DRAM (dynamic random access memory) circuitry, structures and devices resulting from such methods, and systems that incorporate the devices are provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.