MOS capacitors with a finfet process

US8581320B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kangguo Cheng · Schenectady, US
• Balasubramanian S. Haran · Watervliet, US
• Shom Ponoth · Irvine, US
• Theodorus E. Standaert · Clifton Park, US
• Tenko Yamashita · Schenectady, US

Key dates

• Filing date: May 21, 2012
• Grant date: Nov 12, 2013
• Expiry date: May 21, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

Capacitors include a first electrical terminal that has fins formed from doped semiconductor on a top layer of doped semiconductor on a semiconductor-on-insulator substrate; a second electrical terminal that has an undoped material having bottom surface shape that is complementary to the first electrical terminal, such that an interface area between the first electrical terminal and the second electrical terminal is larger than a capacitor footprint; and a dielectric layer separating the first and second electrical terminals.