Semiconductor device with transistor local interconnects

US8581348B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Mahbub Rashed · Cupertino, US
• Steven R. Soss · Patterson, US
• Jongwook Kye · Pleasanton, US
• Irene Y. Lin · Los Altos Hills, US
• James B. Gullette · Wadesboro, US
• Chinh Nguyen · San Jose, US
• Jeff Kim · San Jose, US
• Marc Tarabbia · Austin, US
• Yuansheng Ma · Santa Clara, US
• Yunfei Deng · Berkeley, US
• Rod Augur · Hopewell Junction, US
• Seung-Hyun Rhee · Fishkill, US
• Scott Johnson · Wappingers Falls, US
• Subramani Kengeri · Norwood, US
• Suresh Venkatesan · Los Gatos, US

Key dates

• Filing date: Dec 13, 2011
• Grant date: Nov 12, 2013
• Expiry date: Dec 13, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/907
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate with a first transistor and a second transistor formed on the semiconductor substrate. Each of the transistors includes a source, a drain, and a gate. A CA layer is electrically connected to at least one of the source or the drain of the first transistor. A CB layer is electrically connected to at least one of the gates of the transistors and the CA layer.