Small form factor plasma source for high density wide ribbon ion beam generation
US8590485B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2010 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Aug 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0815
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.