Plasma clean method for deposition chamber
US8591659B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2009 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Dec 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32862
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Improved methods and apparatuses for removing residue from the interior surfaces of the deposition reactor are provided. The methods involve increasing availability of cleaning reagent radicals inside the deposition chamber by generating cleaning reagent radicals in a remote plasma generator and then further delivering in-situ plasma energy while the cleaning reagent mixture is introduced into the deposition chamber. Certain embodiments involve a multi-stage process including a stage in which the cleaning reagent mixture is introduced at a high pressure (e.g., about 0.6 Torr or more) and a stage the cleaning reagent mixture is introduced at a low pressure (e.g., about 0.6 Torr or less).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.