Source-drain extension formation in replacement metal gate transistor device

US8592264B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Takashi Ando · Tuckahoe, US
• Huiming Bu · Millwood, US
• Ramachandra Divakaruni · Ossining, US
• Bruce B. Doris · Brewster, US
• Chung-Hsun Lin · White Plains, US
• Huiling Shang · Bethlehem, US
• Tenko Yamashita · Schenectady, US

Key dates

• Filing date: Dec 21, 2011
• Grant date: Nov 26, 2013
• Expiry date: Dec 21, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method includes forming on a surface of a semiconductor a dummy gate structure comprised of a plug; forming a first spacer surrounding the plug, the first spacer being a sacrificial spacer; and performing an angled ion implant so as to implant a dopant species into the surface of the semiconductor adjacent to an outer sidewall of the first spacer to form a source extension region and a drain extension region, where the implanted dopant species extends under the outer sidewall of the first spacer by an amount that is a function of the angle of the ion implant. The method further includes performing a laser anneal to activate the source extension and the drain extension implant. The method further includes forming a second spacer surrounding the first spacer, removing the first spacer and the plug to form an opening, and depositing a gate stack in the opening.